| PART |
Description |
Maker |
| AOD452AL AOD452A |
N-Channel SDMOSTM POWER Transistor
|
http://
Alpha & Omega Semiconductors
|
| AOT412 AOT412L |
N-Channel SDMOSTM Power Transistor
|
Alpha & Omega Semiconductors
|
| MC74HC1G04 MC74HC1G04DFT1 MC74HC1G04DFT1G MC74HC1G |
Single Inverter
High speed CMOS inverter fabricated with silicon gate CMOS technology HC/UH SERIES, 1-INPUT INVERT GATE, PDSO5
High speed CMOS inverter fabricated with silicon gate CMOS technology 高速CMOS反相器制造硅栅CMOS工艺
|
ONSEMI[ON Semiconductor]
Rectron Semiconductor
|
| TC7SH86FU |
advanced high speed cmos exclusive or gate fabricated
|
TY Semiconductor Co., Ltd
|
| NT511740D0J-6L NT511740D0J NT511740D0J-50 NT511740 |
The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.
|
ETC[ETC]
|
| NT511740C5J-70 NT511740C5J NT511740C5J-50 NT511740 |
The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. 该NT511740C5J194304字4位动态随机存储器的NTC热敏假的吗？拧CMOS硅栅技术
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools.
|
Atmel
|
| ATL35 |
The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t
|
Atmel
|
| FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a>
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
From old datasheet system
N-Channel UltraFET® Trench MOSFET
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FF150R17KE4 |
62mm C-Series module with Trench/Feldstopp Trench/Feldstopp IGBT4 and Emitter Controlled Diode
|
Infineon Technologies AG
|
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
