| PART |
Description |
Maker |
| ST2304SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2318SRG |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9437 |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2304SRG |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| AOTF10T60P |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
| 10-FZ122PA150SC01-P990F18 |
Trench Fieldstop IGBT technology
|
Vincotech
|
