| PART |
Description |
Maker |
| PLD904-4-T |
pulsed infrared laser diode
|
Roithner LaserTechnik G...
|
| L7060-02 |
HIGH-POWER INFRARED PULSED LASER DIODE
|
Hamamatsu Corporation
|
| DLD-100B |
PULSED LASER DIODE DRIVER
|
Directed Energy
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| PCO-7110 |
PULSED LASER DIODE DRIVER MODULE
|
Directed Energy
|
| DL-6140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| NDL7565P1 NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1550nm的光时域反射应用
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NX7563JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
California Eastern Laboratories
|
| NDL7553P NDL7565P1 NDL7103 NDL7113 NDL7153 NDL7163 |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
|
NEC[NEC]
|
| NX7526BF-AA-AZ NX7526BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (95 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7529BB-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (20 mW MIN)
|
http://
California Eastern Laboratories
|
