| PART |
Description |
Maker |
| SKIIP81ANB15T1 |
Miniskiip 8 Semikron Integrated Intelligent Power 3-phase Bridge Rectifier Igbt Braking Chopper
|
Semikron
|
| CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
From old datasheet system
HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
ETC
Mitsubishi Electric Corporation
|
| RM20TPM-H02 RM20TPM-H RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 7MBR25PE120 |
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| RM500DZ RM500DZ-24 RM500DZ-2H RM500DZ-H RM500DZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MGD622 |
IGBT(integrated FRD)
|
Sanken
|
| MGD633 |
IGBT(integrated FRD)
|
Sanken
|
| MGD623N |
IGBT(integrated FRD)
|
Sanken
|
