| PART |
Description |
Maker |
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
(IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
| SUP15P01-52 SUB15P01-52 |
Trans MOSFET P-CH 8V 15A 3-Pin(3 Tab) TO-220AB
Trans MOSFET P-CH 8V 15A 3-Pin(2 Tab) TO-263
|
Vishay Siliconix
|
| IRFIBC20G IRFIBC20 IRFIBC20GPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)
|
IRF[International Rectifier]
|
| SI7964DP SI7964DP-T1-E3 |
Dual N-Channel 60-V (D-S) MOSFET
Trans MOSFET N-CH 60V 6.1A 8-Pin PowerPAK SO T/R
|
Vishay Siliconix
|
| IRFZ44N |
Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220AB
N-Channel MOSFET Transistor
|
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| IRFIZ34GPBF SIHFIZ34G |
Trans MOSFET N-CH 60V 20A 3-Pin(3 Tab) TO-220 Full-Pak
Power MOSFET
|
Vishay Siliconix
Vishay Telefunken
|
| STS1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SO-8 POWERMESH II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A的SO - 8 MOSFET的第二PowerMesh
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1 |
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
SMPS MOSFET
Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
|
IRF[International Rectifier]
|
| IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
