| PART |
Description |
Maker |
| 16R1000G 16R1100G 16R1200G 16R1400G 16R250G 16R250 |
100A short circuit rating 15V Operating voltages Fast time-to-trip
POLYFUSE? Resettable PTCs
|
Littelfuse
|
| WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
|
White Electronic Designs
|
| HM-6617/883 |
PROM, 2Kx8 CMOS, high speed, low power, Fast Access Time 90/120ns
|
Intersil Corporation
|
| HM-6642/883 |
PROM, 512x8 CMOS, high speed, low power, Fast Access Time 120/200ns
|
Intersil Corporation
|
| A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM
256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM
Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
|
AMIC Technology, Corp.
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列
EIGHT DARLINGTON ARRAYS
|
STMicroelectronics N.V.
Allegro MicroSystems
STMICROELECTRONICS[STMicroelectronics]
|
| 5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 59 |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped.
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold.
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option.
128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped.
128K x 32 SRAM. 15ns access time. Lead finish factory option.
128K x 32 SRAM. 15ns access time. Lead finish gold.
|
Aeroflex Circuit Technology
|
| M41T60Q6F M41T6010 |
Serial access real-time clock
|
STMicroelectronics
|
| M41T80M6E M41T80M6F M41T8006 M41T80 |
Serial access Real Time Clock with alarm
|
STMICROELECTRONICS[STMicroelectronics]
|
| M41T62 M41T62Q6F M41T65 M41T65Q6F |
Serial Access Real-Time Clock with Alarms
|
ST Microelectronics
|
| UT62256CLS-35LE UT62256CLS-70LE UT62256CLS-70LLE U |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM
Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
