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1N5446A - VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

1N5446A_7990177.PDF Datasheet

Part No.

1N5446A 1N5468A 1N5475ACHIP

Description

VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

File Size

60.74K / 1 Page

Maker

N/A

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: 1N5400

Maker: MIC

Pack: N/A

Stock: Reserved

Unit price for :

50: $0.06

100: $0.06

1000: $0.05

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Full text search : VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

Related Part Number

PART	Description	Maker
2SC5088	NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS) VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS	Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
BAT68-04W BAT68-05W BAT68-06W BAT68W	Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high speed switching) SILICON, VHF-UHF BAND, MIXER DIODE From old datasheet system	SIEMENS AG SIEMENS[Siemens Semiconductor Group]
2SK3074 EE08686	N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER) From old datasheet system RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER	Toshiba Semiconductor
TA4000F	VHF - UHF WIDE BAND AMPLIFIER VHF~UHF WIDE BAND AMPLIFIER APPLICATIONS	TOSHIBA[Toshiba Semiconductor]
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