PART |
Description |
Maker |
XTSC1206-1NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
XTSC0201-10NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
XTSC0402-470PF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
XTSC0402-33NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
XTSC0402-10NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop
|
Infineon
|
LP25-122-KT151W LP12-112-KT151W LP12-163-KT151W LP |
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1200 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 1100 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 16000 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 5100 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 1600 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 150 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 390 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 30 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 33 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.6 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 2.4 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.3 ohm, THROUGH HOLE MOUNT RTD TEMP SENSOR-PLATINUM RESISTOR, TEMPERATURE DEPENDENT, PTC, 75 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 20 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 24 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 82 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 68 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 6800 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 180 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 18000 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 1800 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 820 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 680 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 22 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 11 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 13 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 56 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 18 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 160 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 68000 ohm, THROUGH HOLE MOUNT RESISTOR, TEMPERATURE DEPENDENT, PTC, 1.8 ohm, THROUGH HOLE MOUNT
|
RCD Components, Inc. Golledge Electronics, Ltd. RCD COMPONENTS INC
|
MPXH6300A MPXH6300A6T1 MPXH6300AC6T1 MPXH6300AC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor HIGH TEMPERATURE ACCURACY INTEGRATED SILICON PRESSURE SENSOR ABSOLUTE, PEIZORESISTIVE PRESSURE SENSOR, 2.9-44.09Psi, 1.5%, 0.30-4.91V, SQUARE, SURFACE MOUNT
|
MOTOROLA[Motorola, Inc] Motorola Mobility Holdings, Inc.
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
MPX2202GP MPX2202ASX MPX2202D MPX2202DP MPX2202AP |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感 200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa???娓╁害琛ュ??????????浼????
|
飞思卡尔半导体(中国)有限公司 椋???″????浣?涓??)??????
|
KTY83/122 KTY83/150 KTY83/151 |
Silicon temperature sensors
|
Philips
|
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