| PART |
Description |
Maker |
| UPA1760G-E1 UPA1760G-E2 |
N-channel enhancement type power MOS FET(Dual type)
|
NEC
|
| UPA1758G-E2 UPA1758G-E1 |
Dual type N-channel enhanced power MOS FET
|
NEC
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| AIDL9 AIDL45 AIDL5J SIDM17 SIDM13 HCMDL20 ACMDL20G |
Logic IC
10-Bit, 125Msps Low Noise 3V ADCs; Package: QFN; No of Pins: 32; Temperature Range: 0°C to 70°C
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max ±12); I_D Q1, max (mA): (max 500)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max /-10); I_D Q1, max (mA): (max 100)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; Comments
Frequency Switching Power Transistor; Application Scope: switching; Part Number: 2SA1736; H_FE: (min 120 @V_CE=2V, I_C=0.1A) (max 400 @V_CE=2V, I_C=0.1A)
Junction FETs (Single); Surface Mount Type: Y; Package: VESM2; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 0.08) (max 0.48); I_DSS, max (mA): (min 1.4); |Yfs|, min (mS): (max -20)
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MOLD; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor; Application Scope: power amplification; Part Number: 2SA1241 逻辑IC
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max 400) 逻辑IC
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA966 逻辑IC
Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 5) (max 30); I_DSS, max (mA): (min 25); |Yfs|, min (mS): (max -40) 逻辑IC
Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: Low-noise; I_DSS, min (mA): (min 0.3) (max 6.5); I_DSS, max (mA): (min 1.2); |Yfs|, min (mS): (max -50)
|
Bourns, Inc.
ANADIGICS, Inc.
ITT, Corp.
|
| 2SK1310A07 2SK1310A |
TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| MP4411 |
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-PIE-MOSV in One)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| UPA2452 UPA2452TL UPA2452TL-E1 |
Nch enhancement-type MOSFET (dual-drain-common-type)
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| 2SK3025 2SK3025TENTATIVE |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N-Channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
|
| 2SK2499-Z 2SK2499 D10045EJ1V0DS00 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
MOS Field Effect Transistor
|
NEC
|
| 3SK199 E001702 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 3SK249 E001708 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
Sanyo Semicon Device
|
