PART |
Description |
Maker |
SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
TPC6101 TPC6.01 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) CONNECTOR ACCESSORY Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor Toshiba Corporation
|
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3236 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) From old datasheet system Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
|
Toshiba Semiconductor Hitachi Semiconductor
|
TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation Toshiba Semiconductor
|
PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
2SJ460 2SJ460M 2SJ460M-T 2SJ460-T/JM 2SJ460/JM |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING P沟道MOS场效应晶体管高速开 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Pch D-MOSFET SST 50V/0.1A
|
NEC, Corp. NEC[NEC]
|
PTF10031 |
50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦,1.0 GHzGOLDMOS场效应晶体管
|
Ericsson Microelectronics
|
PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|