| PART |
Description |
Maker |
| 1N5819-T 1N5817-B 1N5817-T 1N5818-B 1N5819-B 1N581 |
Through-Hole Schottky Rectifiers
Guard Ring Die Construction for Transient Protection
|
Diodes Incorporated
|
| MBR1545CG |
Guard ring die constuction for transient protection
|
Kersemi Electronic Co., Ltd.
|
| BZT52C5V1 BZT52C43 |
Planar Die Construction
|
SHENZHEN YONGERJIA INDU...
|
| MM3Z47VS |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| MM3Z10VS |
Planar Die Construction
|
TY Semiconductor Co., L...
|
| MMBZ5243B |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| MMBT2222 |
Epitaxial planar die construction.
|
TY Semiconductor Co., Ltd
|
| BZT52C6V2S BZT52C11S |
Planar Die Construction Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| FMBT2222A |
FMBT2222A NPN Bipolar Transistor Epitaxial planar die construction
|
First Components International
|
| 1PS76SB70 |
Low forward volatge Guard ring protected Very small plastic SMD package
|
TY Semiconductor Co., L...
|
| DPLS160-7 |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3
Epitaxial Planar Die Construction
|
Diodes, Inc.
Diodes Incorporated
|
| BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q6270 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
