| PART |
Description |
Maker |
| KR-1400AE |
Nominal capacity: 1400mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 10.0mOhm cadnica
|
SANYO
|
| 1755558 |
Header, Nominal current: 12 A, Nom. voltage: 250 V, Pitch: 5 mm, Number of positions: 6, Color: green, Assembly: Soldering
|
PHOENIX CONTACT
|
| MAS9160ASMJ-T |
2 outputs LDO voltage regulator. VOUT1(nom) = 2.5 V, VOUT2(nom) = 2.8 V.
|
mas MICRO ANALOG SYSTEMS
|
| M3062AFCVGP M30626FHPFP M30626FHPGP M30627FHPGP M3 |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K 4K bytes, RAM capacity = 20K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 96K bytes, RAM capacity = 5K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K bytes, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K 4K bytes, RAM capacity = 4K bytes,
Single-chip 16-bit CMOS microcomputer, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 512K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K bytes, RAM capacity = 20K bytes
|
Renesas
|
| ASO10.3X38 609861 0090.0030 0090.0001 0090.0003 |
Midget Fuse, 10.3 x 38 mm, Quick-acting, 1000 VDC, Photovoltaic
Breaking capacity
Breaking capacity
|
Schurter Inc.
|
| 6711 |
0.0095" Wall, Nom. Modified Polyphenilether
|
List of Unclassifed Manufacturers
ETC
|
| NOME337M006R0023 |
OxiCap? NOM Low ESR Multianodes
|
AVX Corporation
|
| D1B0510 D1B051D D1A0510 D1A051D D2A0510 D1B1210 D1 |
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 5.
Reed relay. Contact form 1A SPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B SPDT-CO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 24.
|
Global Components & Controls
|
| ENE201D-05A EN201D-20A EN201D-14A EN201D-05A EN201 |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V 的Z -陷阱迅杰（标称压敏电0070V
OSCILLATORS 100PPM -20 70 3.3V 4 14.31818MHZ TS HCMOS 5X7MM 4PAD SMD 的Z -陷阱迅杰（标称压敏电20070V
Z-TRAP ENE(Nominal varistor voltage 200 to 470V Z -陷阱迅杰（标称压敏电0070V
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| C2260A1-002908 |
Nominal frequency (f0)
|
Vectron International, Inc
|
|
