| PART |
Description |
Maker |
| HN2E04F |
Multi-chip discrete device (PNP SW diode)
|
TOSHIBA
|
| HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| CYM1841APR-20C CYM1841BPZ-25C CYM1841APY-20C CYM18 |
x32 SRAM Module X32号的SRAM模块
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 35 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 20 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PSMA72 PLASTIC, SIMM-72
256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PSMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 25 ns, PSMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PZMA64 PLASTIC, ZIP-64
|
Cypress Semiconductor, Corp.
Everlight Electronics Co., Ltd.
Pyramid Semiconductor, Corp.
YEONHO Electronics Co., Ltd.
|
| AS8S512K32AQ1-25L_Q AS8S512K32P-17L/IT AS8S512K32P |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 PGA-66
512K x 32 SRAM SRAM MEMORY ARRAY
|
Micross Components
Austin Semiconductor
|
| 585-3211 585-3213 585-3215 585-3221 585-3225 585-3 |
Multi-Chip BASED LED T1 3/4 Bi-Pin
585 SERIES BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation
Dialight PLC
|
| ISD1100P ISD1100X ISD1112 ISD1110 ISD1120 ISD1110P |
Single-Chip Voice Record/Playback Device（Single-chip Durations of 12 seconds)(单片的录录音重放一片信息存储持续时12秒）) 单芯片语音记播放设备（单芯片的持续时12秒）（单片的录音/录音重放器（一片信息存储持续时12秒）
Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations(单片声音录音/回放芯片(单片信息存储持续时间12秒钟))
Single-Chip Voice Record/Playback Device（Single-chip Durations of 10 seconds)(单片的录录音重放一片信息存储持续时0秒）)
Single-Chip Voice Record/Playback Device（Single-chip Durations of 12 seconds)(单片的录录音重放一片信息存储持续时2秒）)
SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
RES POWER .360 OHM 1W 5% SMT
|
List of Unclassifed Manufacturers
Winbond Electronics, Corp.
Winbond Electronics Corp
ETC
Electronic Theatre Controls, Inc.
|
| P1200SL P2000SL |
LCAS Asymmetrical Discrete Device
|
Littelfuse
|
| AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| VSM1206 VSM1206KCBT VSM1206KDBT VSM1206KDBW VSM120 |
Bulk Metal? Foil Technology Discrete High Precision Surface Mount Chip Resistor
Bulk Metal庐 Foil Technology Discrete High Precision Surface Mount Chip Resistor
Bulk Metal垄莽 Foil Technology Discrete High Precision Surface Mount Chip Resistor
Bulk Metal㈢ Foil Technology Discrete High Precision Surface Mount Chip Resistor
|
VISAY[Vishay Siliconix]
|
| CS201212-5R6K CS201212-4R7K CS201212-R15K CS201212 |
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 5600000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 4700000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 150000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 3300000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 820000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 680000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 180000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 68000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 33000000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
|
