| PART |
Description |
Maker |
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| SGL-0363Z |
5-2000 MHz Low Noise Amplifier Silicon Germanium
|
SIRENZA[SIRENZA MICRODEVICES]
|
| BGA622 |
Silicon Germanium Wide Band Low Noise Amplifier
|
INFINEON[Infineon Technologies AG]
|
| SGL-0622Z1 SGL-0622Z |
5 - 4000 MHz Low Noise MMIC Amplifier Silicon Germanium
|
SIRENZA MICRODEVICES
|
| SGL0263Z SGL0263ZSQ SGL0263ZSR |
1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER
|
RF Micro Devices
|
| BGA619 |
The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications
|
Infineon Technologies AG
|
| BGA715N7 |
16/32-Bit Single-Chip Microcontroller
Silicon Germanium Low Noise Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| DSS1M8662A S1M8662AX01-F0T0 |
RX IF/BBA WITH GPS
CDMA/PCS/GPS Triple Mode IF/ baseband IC 码分多址/全球定位系统三模式中基带IC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| SGC-23861 SGC-2386Z |
50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
|
SIRENZA MICRODEVICES INC
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
