| PART |
Description |
Maker |
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极
High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
Silicon Z-Diodes 硅的Z -二极
High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military
Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管)
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| MPXV5050VC6T1 |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
| EF6805R2PTD EF6805R2PVD EF6805R3PVD |
57MHz, Wideband, Four Quadrant, Voltage Output Analog Multiplier; Temperature Range: -40°C to 85°C; Package: 16-SOIC
Precision Quad Comparators; Temperature Range: 0°C to 70°C; Package: 16-SOIC
20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers; Temperature Range: 0°C to 70°C; Package: 8-SOIC
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers; Temperature Range: 0°C to 70°C; Package: 8-SOIC
1 Microsecond Precision Sample and Hold Amplifier; Temperature Range: 0°C to 70°C; Package: 16-SOIC 8位微控制
|
KEMET Corporation
|
| ENC102D-10A ENC112D-10A ENC820D-10A ENC220D-10B EN |
±15kV ESD Protected, 5V, Low Power, High Speed and Slew Rate Limited, Full Duplex, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; Temperature Range: -40°C to 85°C; Package: 16-QFN
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
STD MOV
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
|
Central Semiconductor, Corp.
|
| T502B106K016AG6110 |
Tantalum, MnO2 Tantalum, High Temperature, T502, 10 uF, 10%, 16 V, 3528, SMD, MnO2, Molded, High Temperature, 230C, N/A, 2.8 Ohms, Height Max = 2.1mm
|
Kemet Corporation
|
| SIP-1987HT-01-1001FC SIP-1987HT-01-1001FD SIP-1987 |
TaNFilm垄莽 High Temperature DIP and SIP Networks
TaNFilm庐 High Temperature DIP and SIP Networks
TaNFilm? High Temperature DIP and SIP Networks
|
IRC - a TT electronics Company.
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| AM26LS32DCB AM26LS32JCTR AM26LS32/BEA AM26LS33/B2C |
Micropower Precision Shunt Voltage Reference; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Wide Input Range, High Efficiency, Step-Down Switching Regulator; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Low Noise, Rail-to-Rail Precision Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
1.1MHz, 0.4V/us Over-The-Top Micropower, Rail-To-Rail Input and Output Op Amp; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
1.1MHz, 0.4V/us Over-The-Top Micropower, Rail-To-Rail Input and Output Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Positive High Voltage Hot Swap Controllers; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
Line Receiver 线路接收
|
接收
Advanced Micro Devices, Inc.
|
| FHT900-16F FHT200-16F FHT800-16F FHT1000-16F FHT13 |
Radial Leaded PPTC FHT Series: High Temperature, 125隆?C
Radial Leaded PPTC FHT Series: High Temperature, 125掳C
Radial Leaded PPTC FHT Series: High Temperature, 125°C
|
RFE international
|
|
