| PART |
Description |
Maker |
| GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| 2SK210 2SK210-BL |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
|
TOSHIBA
|
| NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1%
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE72118-T2 NE72118 NE72118-T1 |
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET
|
NEC[NEC]
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| UPD30100GC-40-7EA |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C
Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Infineon Technologies AG
|
| LQP03TN12NJ04 AN26032A LQP03TN8N2H04 GRM33B30J104K |
Ultra small , Single Band LNA-IC with Band-limiting filter for 600 MHz Band Applications
|
Panasonic Battery Group
|
| D1021UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| MRF136Y |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL MOS BROADBAND RF POWER FET
|
MACOM[Tyco Electronics]
|
| CHV2242A CHV2242A-99F_00 CHV2242A-99F/00 |
Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
UMS[United Monolithic Semiconductors]
|
