| PART |
Description |
Maker |
| APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| BSM15GP120DL BSM150GAL120DL |
15 A, 1200 V, N-CHANNEL IGBT ECONOPIM
150 A, 1200 V, N-CHANNEL IGBT
|
|
| CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| GP1600FSS12 |
Powerline N-Channel Single Switch IGBT Module Advance Information 2100 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
| APT25GT120BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
|
Advanced Power Technology, Ltd.
|
| IRG4PSH71KD |
78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA package
|
International Rectifier
|
| SEMIX503GB126HDS |
Trench IGBT Modules 480 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| SEMIX553GAR128DS09 SEMIX553GAR128DS-09 |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
