| PART |
Description |
Maker |
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| AM2310N |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
| AM2317P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM2305P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
| AM3850C |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., Ltd
|
| AM2342NE |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
| AM3459P |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| AM3826N |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
| G3VM-21ER G3VM-21BR |
Higher Power, 4A switching with a 20V load, DIP package. Low 20 mΩ ON Resistance.
|
Omron Electronics LLC
|
