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HY27SH084G2M-TPEP - 512M X 8 FLASH 1.8V PROM, 30 ns, PDSO48

HY27SH084G2M-TPEP_7811888.PDF Datasheet


 Full text search : 512M X 8 FLASH 1.8V PROM, 30 ns, PDSO48


 Related Part Number
PART Description Maker
SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI (SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
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64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
DP5Z1MM16PI3-12C DP5Z1MM16PJ3-12B DP5Z1MW16PA3-12B 1M X 16 FLASH 5V PROM, 120 ns, CQIP48 HERMETIC SEALED, STRAIGHT, SLCC-48
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1M X 16 FLASH 5V PROM, 150 ns, CQCC48

AS8FLC1M32BP-70/IT AS8FLC1M32BQ-100/XT AS8FLC1M32B 1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66
1M X 32 FLASH 3V PROM, 100 ns, CQFP68
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Micross Components
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI 4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
Spansion, Inc.
SPANSION LLC
S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
SST39VF3201B-70-4C-B3KE SST39VF3202B-70-4I-B3KE-T 2M X 16 FLASH 2.7V PROM, 70 ns, PTSO48
2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
32 Mbit (x16) Multi-Purpose Flash Plus
Microchip Technology Inc.
SILICON STORAGE TECHNOLOGY INC
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
MX28F1000PRC-90-C4 MX28F1000PQC-90-C4 MX28F1000PTC 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, REVERSE, TSOP1-32
128K X 8 FLASH 12V PROM, 90 ns, PQCC32 PLASTIC, LCC-32
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, TSOP1-32
128K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32
128K X 8 FLASH 12V PROM, 150 ns, PDSO32
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB 16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
Central Semiconductor, Corp.
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E 16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
Numonyx B.V
MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
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32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
K9F4G08U0M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
Samsung Semiconductor Co., Ltd.
 
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