| PART |
Description |
Maker |
| 1N4007GPP 1N4006GPP |
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1.0 AMP, 50 THRU 1000 VOLTS 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp.
Vishay Intertechnology, Inc.
|
| BC32725TA BC32725TFR BC327ABU BC32740BU BC32725TAR |
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| 1N4003TA2B2 1N4006TR |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
NIHON INTER ELECTRONICS CORP
|
| RGF1M RGF1G RGF1D RGF1B RGF1J RGF1A RGF1K |
1.0 Ampere Fast Recovery Rectifiers 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
From old datasheet system
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FM806C |
GLASS PASSIVATED SILICON RECTIFIER VOLTAGE 800 Volts CURRENT 8.0 Amperes 8 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB
|
Rectron Semiconductor
|
| 2SB1197-R 2SB1197 2SB1197-P 2SB1197-Q |
PNP Silicon Epitaxial Transistors 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
| JAN1N5620 JANTX1N5614 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| NTE290 NTE289 |
800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Quad Channel, 4/0, 25Mbps, Digital Isolator 16-SOIC -40 to 125
Silicon Complementary Transistors Audio Power Amplifier, Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| EGP10A08 EGP10B-TP |
1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts
DIODE GPP 1A 100V HI EFF DO41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
|
|
