PART |
Description |
Maker |
M2F2G64CB88BHN |
Unbuffered DDR3 SDRAM DIMM
|
Nanya
|
HYMD232646A8J-D4 HYMD232646A8J-D43 HYMD232646A8J-J |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
HYMD216726A6-H HYMD216726A6-K HYMD216726A6-L HYMD2 |
Unbuffered DDR SO-DIMM 16Mx72|2.5V|M/K/H/L|x5|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
HMT112V7AFP8C-G7 HMT112V7AFP8C-H9 HMT351V7AMP4C-G7 |
240pin DDR3 SDRAM VLP Registered DIMM 128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
|
Hynix Semiconductor, Inc.
|
HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor http://
|
HYMD216646AL6-K HYMD216646AL6-H HYMD216646A6-H HYM |
Unbuffered DDR SDRAM DIMM 16Mx64|2.5V|M/K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H |
PC100 Unbuffered DIMM 32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
M366S2953MTS-C75 M366S2953MTS-C1L M366S2953MTS M36 |
128Mx64 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet PC133/PC100 Unbuffered DIMM From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
HMT451U6MFR8C-PB HMT451U6MFR8C-H9 HMT451U6MFR8C-G7 |
DDR3 SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|