PART |
Description |
Maker |
2SK439 2SK439E K439 |
Silicon N Channel MOS FET Silicon N-Channel MOS FET 硅N沟道场效应晶体管 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK 2SK439
|
Hitachi,Ltd. Sanyo Semicon Device Hitachi Semiconductor
|
NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET) 42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] http://
|
MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
2SK2906-01 |
N-channel MOS-FET N-channel MOS-FET 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd.
|
2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET MOS Field Effect Transistor N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
FJX597JH FJX597JHTF |
Si N-channel Junction FET Capacitor Microphone Applications Silicon N-Channel Junction FET
|
FAIRCHILD[Fairchild Semiconductor]
|
NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管(低噪沟道结型场效应管 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|