PART |
Description |
Maker |
ADP3330ARTZ-2.5-R7 ADP3330ARTZ-3.6-R7 ADP3330ARTZ- |
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO6 3.6 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ROHS COMPLIANT, ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN 2.75 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN 3 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN 2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
|
Analog Devices, Inc. ANALOG DEVICES INC
|
STW9C2SA |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
PTFA092213EL-15 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PPC440EP-3UC667C PPC440EP-3TC667C PPC440EP-3UC667C |
32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, ROHS COMPLIANT, THERMALLY ENHANCED, PLASTIC, BGA-456 32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, THERMALLY ENHANCED, PLASTIC, BGA-456
|
Applied Micro Circuits, Corp.
|
PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
PTFA261301E PTFA261301F |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
PTF140451E PTF140451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz
|
Infineon Technologies AG
|
PTFA240451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
|
Infineon Technologies AG
|
PTFA092201E PTFA092201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
|
Infineon Technologies AG
|
|