Part Number Hot Search : 
EL4332CS PEX8733 TC100PA 223H06PP NC0BAWE3 LXD975A 86CNQ200 WRB2412
Product Description
Full Text Search

2SK2006-4072 - 5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET

2SK2006-4072_7787608.PDF Datasheet


 Full text search : 5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
 Product Description search : 5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET


 Related Part Number
PART Description Maker
NS471Q6 NS471B5 RES THNFLM NET 9M OHM/900K OHM/90K OHM/9K OHM/900 OHM/100 OH - Bulk
CNS 471 Decade Divider, Single-In-Line Through Hole Thin Film Resistor Networks (Standard)
Vishay Sfernice
2SK1942-01 N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
IRFB20STRRPBF IRFB20SPBF 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET

2SK2006-4072 5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET

2SK1943-01 OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
IPW90R340C3 15 A, 900 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
INFINEON TECHNOLOGIES AG
IRFBF20PBF 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
VISHAY SILICONIX
APT36N90BC3G Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Microsemi Corporation
Microsemi, Corp.
FQP3N90 900V N-Channel MOSFET 3.6 A, 900 V, 4.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FQA11N90C 900V N-Channel MOSFET 11 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
900V N-Channel Advanced QFET C-Series
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FQA8N90C 900V N-Channel Q-FET
900V N-Channel MOSFET
TERMINAL 8 A, 900 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
APT10090BLL APT10090SLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 12A 0.900 Ohm
Advanced Power Technology Ltd.
 
 Related keyword From Full Text Search System
2SK2006-4072 bus switch 2SK2006-4072 Rail 2SK2006-4072 0pam 2SK2006-4072 filetype:pdf 2SK2006-4072 Microelectronic
2SK2006-4072 Reference 2SK2006-4072 mount 2SK2006-4072 Precision 2SK2006-4072 参数 封装 2SK2006-4072 Characteristic
 

 

Price & Availability of 2SK2006-4072

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.28029489517212