| PART |
Description |
Maker |
| EM66932ABG-1H/LG |
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)
|
Etron Technology, Inc.
|
| S-AU57 |
UHF BAND HAM FA RF POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
|
Toshiba Semiconductor
|
| SUR522H S-AU50H |
UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER UHF频段调频功率放大器模块，手持式收发器
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| 2SC2056 SC2056 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in VHF band portable or hand-held radio applications)
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| MRF9210 MRF9210R3 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| CJP16N25 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology
|
