PART |
Description |
Maker |
RJK6006DPP-E0 RJK6006DPP-E0-15 |
600V - 5A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6032DPH-E0 RJK6032DPH-E0T2 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6035DPP-E0 RJK6035DPP-E0-15 |
600V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S1DPD-00J2 |
600V - 8A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6002DPH-E0 RJK6002DPH-E0T2 RJK6002DPH-E0-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6013DPP-E0 RJK6013DPP-E0-15 |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJQ6020DPM |
600V - 20A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S3DPD-00J2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S7DPQ-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
|
NEC[NEC]
|