| PART |
Description |
Maker |
| 0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA9 |
Enhancement Mode pHEMT Technology (E-pHEMT)
|
Freescale Semiconductor, Inc
|
| MGA-412P8-TR1G MGA-412P8-BLKG MGA-412P8-TR2G |
GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
|
Avago Technologies Ltd.
|
| ATF-521P8-TR2 ATF-521P8-TR1 ATF-521P8-BLK |
ATF-521P8 · Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in LPCC
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
Agilent (Hewlett-Packard)
ETC[ETC]
|
| LX5560L LX5560 |
InGaAs - E-Mode pHEMT Low Noise Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| LPV1500 |
PACKAGED LOW NOISE PHEMT
1 W Power PHEMT
|
Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
|
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| HMC605LP3 HMC605LP3E |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
|
Hittite Microwave Corporation
|
| HMC604LP3 HMC604LP3E |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz
|
Hittite Microwave Corporation
|
| MGA-425P807 MGA-425P8-BLK MGA-425P8-TR1 MGA-425P8- |
GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package
|
AVAGO TECHNOLOGIES LIMITED
|
| HMC373LP3 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
|
HITTITE[Hittite Microwave Corporation]
|
| TN2010T |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电00V，夹断电.12AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET Transistor
|
Vishay Intertechnology,Inc.
ETC
|
