| PART |
Description |
Maker |
| MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V.
(MPS929 / MPS930A) AMPLIFIER TRANSISTOR
AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| KTA1837 |
General Purpose Transistor
TRIPLE DIFFUSED PNP TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SA1899 2SA1899O |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC2458 2SC2458L |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications
TRANSISTOR (AUDIO AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| MMBC1009F1 MBC1009F1 |
AM/FM RF AMPLIFIER TRANSISTOR 调幅/调频射频放大器晶体管
NPN (AM/FM RF AMPLIFIER TRANSISTOR)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| KTC9018 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)
|
KEC(Korea Electronics)
|
| 2SC3775 |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications
|
SANYO
|
| 2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| ENA1125 |
NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC3777 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications
|
SANYO
|
