| PART |
Description |
Maker |
| MBR0540W |
Low forward voltage drop, Guard ring construction forTransient protection
|
TY Semiconductor Co., L...
|
| MMBT2222 |
Epitaxial planar die construction
|
MAKO SEMICONDUCTOR CO.,...
|
| 2KBP10M |
Glass Passivated Die Construction
|
Mospec Semiconductor
|
| UMB10MN |
Glass Passivated Die Construction
|
DIYI Electronic Technol...
|
| SAC7.0 SAC12 |
Glass Passivated Die Construction
|
Shanghai Semitech Semic...
|
| FMBT2222A |
FMBT2222A NPN Bipolar Transistor Epitaxial planar die construction
|
First Components International
|
| BAT74S |
Low forward voltage Guard ring protected Small SMD package.
|
TY Semiconductor Co., Ltd
|
| MMBT2369 MMBT2907 |
Epitaxial planar die construction.
Epitaxial planar die construction.
|
MAKO SEMICONDUCTOR CO.,LIMI...
MAKO SEMICONDUCTOR CO.,...
|
| 1PS76SB10 |
Low forward volatge Guard ring protected Very small plastic SMD package.
|
TY Semiconductor Co., L...
|
| 1PS76SB17 |
Low forward volatge Guard ring protected Very small plastic SMD package.
|
TY Semiconductor Co., L...
|
| BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q6270 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
