| PART |
Description |
Maker |
| UF1A-UF1M HS1A-HS1M UF1J |
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS
Glass High Efficiency Rectifiers
Glass Ultrafast Recovery Rectifiers
|
HY ELECTRONIC CORP.
|
| UF2A-UF2M HS2A-HS2M HS2K UF2A UF2J |
Glass Ultrafast Recovery Rectifiers
Glass High Efficiency Rectifiers
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS
|
HY ELECTRONIC CORP.
|
| 1N5985B ON0014 1N6003B 1N5993B 1N5992B 1N5987B 1N5 |
3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,5.6V齐纳电压，齐纳稳压二极管) 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,6.8V齐纳电压，齐纳稳压二极管) 6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,12V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,15V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,18V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,10V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,2.4V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,4.3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,3.3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,3V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,4.7V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,5.1V齐纳电压，齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35玻璃封装,13V齐纳电压，齐纳稳压二极管)
From old datasheet system
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35?荤?灏??,6.2V榻?撼?靛?锛??绾崇ǔ??????)
|
MOTOROLA INC
ON Semiconductor
|
| DF15005S DF1501S |
SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS SINGLE-PHASE GLASS BRIDGE
|
PACELEADER INDUSTRIAL
|
| 1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER
|
Chenyi Electronics
http://
|
| RU2AG RU2BG RU2DG RU2GG RU2JG RU2KG RU2MG |
Ultra Fast Recovery Pack: DO-15
FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A
(RU2AG - RU2MG) FULTRAFAST EFFICIENT GLASS
|
Gulf Semiconductor
|
| 135D306X0006C2 135D206X0010C2 135D476X0010C2 135D1 |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to 200°C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55隆?C to 200隆?C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55掳C to 200掳C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55°C to 200°C Operation
|
VISAY[Vishay Siliconix]
|
| WRA0505P-3WNBSP WRAP-3W WRA0505P-3W WRA0509P-3W WR |
DIODE ZENER SINGLE 1000mW 11Vz 23mA-Izt 0.05 5uA-Ir 8.4Vr DO41-GLASS 5K/AMMO 宽输入的隔离
DIODE ZENER SINGLE 1000mW 10Vz 25mA-Izt 0.05 10uA-Ir 7.6Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 13Vz 19mA-Izt 0.05 5uA-Ir 9.9Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 15Vz 17mA-Izt 0.05 5uA-Ir 11.4Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 12Vz 21mA-Izt 0.05 5uA-Ir 9.1Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 15Vz 17mA-Izt 0.05 5uA-Ir 11.4Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 13Vz 19mA-Izt 0.05 5uA-Ir 9.9Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 12Vz 21mA-Izt 0.05 5uA-Ir 9.1Vr DO41-GLASS 5K/AMMO
WIDE INPUT ISOLATED & REGULATED 3W OUTPUT [
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| BYV27100 BYV27150 BYV27200 BYV2750 BYV27 DIODESINC |
200V; 2.0A super-fast glass body rectifier
150V; 2.0A super-fast glass body rectifier
100V; 2.0A super-fast glass body rectifier
2.0A SUPER-FAST GLASS BODY RECTIFIER 安培的电流超快速整流玻璃钢车身
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥
Bridge Rectifiers (Power) 桥式整流器（电力
10 Amp Glass Passivated Bridge Rectifier
10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| GS1J-T1 GS1J-T3 GS1A GS1M-T3 GS1A-T1 GS1A-T3 GS1B- |
CHOKE RF CONFORMAL COATED 0.68UH
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 安培表面贴装玻璃钝化整流
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
WON-TOP ELECTRONICS CO LTD
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
