| PART |
Description |
Maker |
| BR9020-W/F-W/FV-W/RFV-W/RFVM-W |
Memory LSIs > EEPROM > 3 wire serial (Direct connection serial port)
|
ROHM
|
| FPM-3060G FPM-3060G-RAE FPM-3060G-UAE FPM-3060G-XA |
6.5 VGA Industrial Monitor with Resistive Touchscreen and Direct-VGA Port
|
Advantech Co., Ltd.
|
| K4R441869A-NM K4R441869A-MCK8 K4R441869A-NCK7 |
8M X 18 DIRECT RAMBUS DRAM, 45 ns, PBGA62
K4R271669A-N(M):Direct RDRAMData Sheet
|
Samsung Electronic
|
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Ramtron International Corporation
|
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Cypress Semiconductor
|
| 1625932-8 |
Spindle Operated Potentiometers
|
Tyco Electronics
|
| DSHG-01 DSHG-03 |
Pilot Operated Directional Valves
|
Yuken
|
| RB-11-10-BU1-C |
C-Series Remote Operated Module
|
Carling Technologies
|
| SMB18C SMB46L SMB46U SMB46S |
Self-contained DC-operated Opposed Mode Sensors
|
Electronic Theatre Controls, Inc.
|
| SMB46L SMB46S SMB46U SMB312B SMB312PD SMB312S SM31 |
Self-contained DC-operated Opposed Mode Sensors
|
List of Unclassifed Manufacturers
ETC
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
