| PART |
Description |
Maker |
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 2000 V, SILICON, SIGNAL DIODE
6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
| BYM06-400 BYM06-600 BYM06-100 BYM06-50 |
0.5 A, 400 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
0.5 A, 100 V, SILICON, SIGNAL DIODE
0.5 A, 50 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc.
Spacecraft Components, Corp.
|
| J4248 SV4247US SV4248US SV4249US |
1 A, 800 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 1000 V, SILICON, SIGNAL DIODE
|
SENSITRON SEMICONDUCTOR
|
| GL41YHE3/97 BYM10-600-E3/96 |
1 A, 1600 V, SILICON, SIGNAL DIODE, DO-213AB ROHS COMPLIANT, PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| CMR1U-06MBK |
1 A, 600 V, SILICON, SIGNAL DIODE
|
CENTRAL SEMICONDUCTOR CORP
|
| 1N6661 1N6663 JAN1N6663 JANTXV1N6663 JANTX1N6663 1 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation
Microsemi, Corp.
|
| RGP10JE |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
|
GENERAL SEMICONDUCTOR INC
|
| ER1J-LTP |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
MICRO COMMERCIAL COMPONENTS
|
| SF10JG |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
|
Vishay Beyschlag
|
| FR103-T3 FR105-T3 FR103-GT3 |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
SENSITRON SEMICONDUCTOR
|
| MUR140-T MUR160-A |
1.0A SUPER-FAST RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
|
