| PART |
Description |
Maker |
| SI2315BDS |
-12 0.050 @ VGS = -4.5 V 0.065 @ VGS = -2.5 V 0.100 @ VGS = -1.8 V
|
TY Semiconductor Co., Ltd
|
| C450UT190-0319-30 C460UT190-0319-30 C450UT190-0318 |
Small Chip 190 x 190 x 85 Single Wire Bond Structure
Cree UltraThin Gen III LEDs
Small Chip 190 x 190 x 85 Single Wire Bond Structure
|
Cree, Inc
Marktech Corporate
|
| SI9410DY |
VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V)
|
TY Semiconductor Co., L...
|
| NB3N502DG NB3N502DR2G NB3N502 |
14 MHz to 190 MHz PLL Clock Multiplier 190 MHz, OTHER CLOCK GENERATOR, PDSO8
|
ONSEMI[ON Semiconductor]
|
| 835-IF117.5M-14C |
117.5MHz IF SAW Filter 14.63 MHz Bandwidth
|
Oscilent Corporation
|
| EMK11H2H-25.117MTR |
CRYSTAL OSCILLATOR, CLOCK, 25.117 MHz, LVCMOS OUTPUT
|
ECLIPTEK CORP
|
| EMK12H2H-25.117MTR |
CRYSTAL OSCILLATOR, CLOCK, 25.117 MHz, LVCMOS OUTPUT
|
ECLIPTEK CORP
|
| NVD4804N NVD4804NT4G NTD4804NT4G |
Power MOSFET 30 V, 117 A, Single N?Channel, DPAK/IPAK
|
ON Semiconductor
|
| LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| 250966B |
190.0 MHz SAW Filter
|
Integrated Technology F...
|
| MAX133CQH-D |
3¾ Digit DMM Circuit
|
MAXIM - Dallas Semiconductor
|
