| PART |
Description |
Maker |
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPTB00025 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| MKWI50-48S24 MKWI50-24S033 MKWI50-24S05 MKWI50-24S |
DC/DC CONVERTER 50W Highest Power Density Smallest encapsulated 50W Converter
|
Minmax Technology Co., Ltd.
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STK415-090-E |
2-Channel Power Switching Audio Power IC, 50W 50W
|
Sanyo Semicon Device
|
| LTC1921 1921F LTC1921CS8 LTC1921IS8 LTC19211 LTC19 |
Dual 48V Supply and Fuse Monitor
Dual ?48V Supply and Fuse Monitor
From old datasheet system
Dual -48V Supply and Fuse Monitor; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to 70°C 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
|
Linear Technology, Corp.
|
| 2N5491 2N5493 2N5497 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W.
Silicon N-P-N VERSAWATT transistor. 75V, 50W.
Silicon N-P-N VERSAWATT transistor. 90V, 50W.
|
General Electric Solid State
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| MIL-STD348A/402 CECC22210 |
RPC-N 50W Jack ?7/16 50W Plug
|
Rosenberger Hochfrequen...
|
|
