PART |
Description |
Maker |
K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification 16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
M2V64S20DTP-6L M2V64S30DTP-6L M2V64S40DTP-6L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V64S20DTP-7L M2V64S30DTP-7L M2V64S40DTP-8L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V64S20BTP-8A M2V64S30BTP-8A M2V64S40BTP-8A |
64M bit Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V64S40BTP-8L M2V64S30BTP-8L M2V64S40BTP-7L M2V64 |
64M bit Synchronous DRAM 6400位同步DRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
HYM72V64736T8-H |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
HYB39S64400CT-7.5 HYB39S64800CT-7.5 HYB39S64800CTL |
64M SDRAM Component 64-MBit Synchronous DRAM
|
Infineon Technologies A...
|
M5M4V64S30ATP-8A M5M4V64S30ATP-8L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
MT18LSDT6472AI-133XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life 64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44 16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44 Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50 DB25PH 16兆位同步DRAM 16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group SIEMENS AG
|