| PART |
Description |
Maker |
| LDM-0808-300M-91 |
CW Output Power: 300mW Typical 808 nm Emission Wavelength High-deeiciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| LDS-1310-005-BL |
Output Power: 5 mW Typical 1310 nm Emission Wavelength Single mode High Reliability, High Effciency
|
Roithner LaserTechnik GmbH
|
| MCP6547 MCP6549 MCP6546 MCP6548 MCP6547-I/MS MCP65 |
The MCP6549 is an Open Drain, quad comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the sixteen lead
The MCP6546 is an Open-Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ...
The MCP6549 is an Open Drain, quad comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ...
The MCP6547 is an Open Drain, dual comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the eight lead PD
The MCP6546 is an Open-Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the eight lead
The MCP6548 is an Open Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ...
The MCP6547 is an Open Drain, dual comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ...
OPEN-DRAIN OUTPUT SUB-MICROAMP COMPARATORS
|
MICROCHIP[Microchip Technology]
|
| V23990-P825-F10-P2-19 |
Typical average static loss as a function of output current
|
Vincotech
|
| V23990-P824-F10-P2-19 |
Typical average static loss as a function of output current
|
Vincotech
|
| 6MS24017P43W41646 |
IGBT Stack for typical voltages up to 690 VRMS Rated output current 1175RMS
|
Infineon Technologies A...
|
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| M3500-0612 |
600-1200 MHZ TYPICAL OUTPUT FREQUENCY / MODULATION SENSITIVITY VERSUS TUNING VOLTAGE
|
Micronetics, Inc.
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IRF6662 |
From old datasheet system
DirectFet Power MOSFET Typical values (unless otherwise specified)
|
IRF[International Rectifier]
|
| IRFZ44 |
45 Ampere Typical N-Channel Trench Power MOSFETs
45 Ampere Typical N-Channel Trench Power MOSFETs
|
Thinki Semiconductor Co., Ltd.
Thinki Semiconductor Co...
|
