| PART |
Description |
Maker |
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| SQ2348ES |
TrenchFET Power MOSFET
|
TY Semiconductor Co., Ltd
|
| IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| SI2302CDS |
Halogen-free Option Available TrenchFET? Power MOSFET
|
TY Semiconductor Co., Ltd
|
| SI2312CDS |
Halogen-free TrenchFET? Power MOSFET 100 % Rg
|
TY Semiconductor Co., Ltd
|
| SI2314EDS |
TrenchFET Power MOSFET ESD Protected: 3000 V
|
TY Semiconductor Co., Ltd
|
| IXFH11N80 IXFH13N80 IXFM13N80 IXFM11N80 |
HiPerFET Power MOSFETs 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SI2342DS |
Halogen-free TrenchFET? Power MOSFET Low On-Resistance
|
TY Semiconductor Co., Ltd
|
| IXFR24N50 IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
