| PART |
Description |
Maker |
| 1N5232A 1N5221A 1N5221B 1N5221C 1N5221D 1N5270B 1N |
22 V, 5.6 mA, zener diode
13 V, 9.5 mA, zener diode
36 V, 3.4 mA, zener diode
3.3 V, 20 mA, zener diode
30 V, 4.2 mA, zener diode
15 V, 8.5 mA, zener diode
8.7 V, 20 mA, zener diode
2.5 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
3.3 V, 20 mA, zener diode
19 V, 6.6 mA, zener diode
33 V, 3.8 mA, zener diode
56 V, 2.2 mA, zener diode
11 V, 20 mA, zener diode
28 V, 4.5 mA, zener diode
24 V, 5.2 mA, zener diode
60 V, 2.1 mA, zener diode
60 V, 2.1 mA, zener diode
39 V, 3.2 mA, zener diode
39 V, 3.2 mA, zener diode
17 V, 7.4 mA, zener diode
14 V, 9.0 mA, zener diode
12 V, 20 mA, zener diode
18 V, 7.0 mA, zener diode
5.6 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
87 V, 1.4 mA, zener diode
4.7 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
7.5 V, 20 mA, zener diode
110 V, 1.1 mA, zener diode
2.8 V, 20 mA, zener diode
24 V, 5.2 mA, zener diode
28 V, 4.5 mA, zener diode
25 V, 5.0 mA, zener diode
1N52 SERIES ZENER DIODES
FKC 2.5/6-STF
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 250μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
2.5 V, 20 mA, zener diode
36 V, 3.4 mA, zener diode
9.1 V, 20 mA, zener diode
11 V, 20 mA, zener diode
62 V, 2.0 mA, zener diode
110 V, 1.1 mA, zener diode
3.9 V, 20 mA, zener diode
82 V, 1.5 mA, zener diode
16 V, 7.8 mA, zener diode
12 V, 20 mA, zener diode
3.9 V, 20 mA, zener diode
43 V, 3.0 mA, zener diode
68 V, 1.8 mA, zener diode
68 V, 1.8 mA, zener diode
56 V, 2.2 mA, zener diode
30 V, 4.2 mA, zener diode
43 V, 3.0 mA, zener diode
6.2 V, 20 mA, zener diode
3.0 V, 20 mA, zener diode
33 V, 3.8 mA, zener diode
14 V, 9.0 mA, zener diode
8.2 V, 20 mA, zener diode
2.8 V, 20 mA, zener diode
6.8 V, 20 mA, zener diode
75 V, 1.7 mA, zener diode
10 V, 20 mA, zener diode
47 V, 2.7 mA, zener diode
75 V, 1.7 mA, zener diode
51 V, 2.5 mA, zener diode
100 V, 1.3 mA, zener diode
8.7 V, 20 mA, zener diode
22 V, 5.6 mA, zener diode
|
LRC[Leshan Radio Company]
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| CDLL4620 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4 |
4.3 volt zener diode
3.3 volt zener diode
5.1 volt zener diode
3.9 volt zener diode
2.4 volt zener diode
LEADLESS PACKAGE FOR SURFACE MOUNT
2-of-3 Decoder/Demultiplexer 8-US8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-SM8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-DSBGA -40 to 85
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
4.7 volt zener diode
5.6 volt zener diode
2.2 volt zener diode
3.6 volt zener diode
2.0 volt zener diode
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
|
| TMP87C809BNG TMP87C409BNG TMP87C409BMG TMP87C809BM |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.2 to 7.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.0 to 7.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.3 to 7.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| 1N5241B-TAP 1N5261B-TAP 1N5230B-TR 1N5223B-TR 1N52 |
DIODE 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Voltage Regulator Diode
Diode Zener Single 47V 5% 500mW 2-Pin DO-35 Ammo
Diode Zener Single 4.7V 5% 500mW 2-Pin DO-35 T/R
Diode Zener Single 2.7V 5% 500mW 2-Pin DO-35 T/R
Diode Zener Single 56V 5% 500mW 2-Pin DO-35 T/R
Small Signal Zener Diodes
ZENER DIODE DO35-E2 - Ammo Pack
Diode Zener Single 15V 5% 500mW 2-Pin DO-35
Diode Zener Single 3V 5% 500mW 2-Pin DO-35 T/R
|
Vishay Semiconductors
Vishay Siliconix
|
| 015Z9.1 015Z10 015Z11 015Z12 015Z2 015Z2.0 015Z2.2 |
DIODE (CONSTANT VOLTAGE REGULATION APPLICATIONS)
Silicon diode for constant voltage regulation applications
5.1V,Zener Diode(for Constant Voltage Regulation Application)(5.1V,用于持续稳压的齐纳二极管)
CAP 3900PF 100V 10% X7R AXIAL BULK S-MIL-PRF-39014
CAP 4.7UF 10V 10% TANT SMD-7343-31 TR-7
40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
240 x 320 pixel format (portrait mode), Compact LCD size
240 x 64 pixel format, CFL, LED, or EL Backlight available
8 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
4.3V,Zener Diode(for Constant Voltage Regulation Application)(4.3V,用于持续稳压的齐纳二极管) 4.3V的，齐纳二极管（恒电压调节应用程序）.3V的，用于持续稳压的齐纳二极管
CAP RF 2.4PF 250V 0603 SMD 二极管（恒压规例申请
5.6V,Zener Diode(for Constant Voltage Regulation Application)(5.6V,用于持续稳压的齐纳二极管) 5.6V，齐纳二极管（恒电压调节应用程序）（5.6V，用于持续稳压的齐纳二极管）
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
意法半导
|
| CMH01 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 10.4 to 10.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 开关电源的应用
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 10.4 to 10.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Switching Mode Power Supply Applications
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Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S5.6FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| KDZ93V |
ZENER DIODE CONSTANT VOLTAGE REGULATION APPLICATION
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KEC(Korea Electronics)
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