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SDB8200PH - 200V, 8A POWER SCHOTTKY RECTIFIER

SDB8200PH_7707302.PDF Datasheet


 Full text search : 200V, 8A POWER SCHOTTKY RECTIFIER


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SDB8200PH 200V, 8A POWER SCHOTTKY RECTIFIER
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IRFI640G 200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.18ohm,身份证\u003d 9.8A
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IRF9630S IRF9630STRL IRF9630STRR -200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
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Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-6.5A)
IRF[International Rectifier]
IRFI630G IRFI630 IRFI630GPBF 200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
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Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
IRF[International Rectifier]
IRF9630 IRF9630PBF -200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
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IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|4A(丁)|63AB
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Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
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Fairchild Semiconductor
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IRFR9210 IRFU9210 -200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
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IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NT TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 5A条(丁)|52AA
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IRFB31N20D IRFS31N20DTRL Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
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IRFP240 IRFP250NPBF IRFP240PBF Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)\u003d 0.18ohm,身份证\u003d 20A条)
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