| PART |
Description |
Maker |
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极
High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
Silicon Z-Diodes 硅的Z -二极
High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military
Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管)
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HVS2512 HVS1210 HVS4020 HVS1206 |
High Voltage / High Temperature Thick Film Chip Resistors
|
Riedon Powertron
|
| HVS0805-150MK8 HVS1206-100KJ8 HVS0805-100KJ8 |
High Voltage / High Temperature Thick Film Chip Resistors
|
Riedon Powertron
|
| TMPG06-10 TMPG06-10A TMPG06-7.5A TMPG06-6.8 TMPG06 |
PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| 303DMQ600 |
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Sangdest Microelectroni...
|
| HA2-5002_883 HA-500288306 HA4-5002_883 HA-5002883 |
Monolithic, Wideband, High Slew Rate, High Output Current Buffer; Temperature Range: -55
|
INTERSIL[Intersil Corporation]
|
| BTA412Y BTA412Y-600B BTA412Y-600C BTA412Y-800B BTA |
12 A Three-quadrant triacs, insulated, high commutation, high temperature
|
NXP Semiconductors N.V.
|
| BTA416Y-800B BTA416Y-800C BTA416Y-600B BTA416Y-600 |
16 A Three-quadrant triacs, insulated, high commutation, high temperature
|
NXP Semiconductors N.V.
|
| TPSMB30AHE3-52T TPSMB30AHE3-5BT TPSMB20A TPSMB36A |
Surface Mount PAR? Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
