| PART |
Description |
Maker |
| BFG198T/R |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | SOT-223 晶体管|晶体管|叩| 10V的五（巴西）总裁| 100mA的一（c）|的SOT - 223
|
Pulse Engineering, Inc.
|
| BLU56T/R |
TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 200MA I(C) | SOT-223 晶体管|晶体管|叩| 16V的五（巴西）总裁| 200mA的一c）|的SOT - 223
|
NEC, Corp.
|
| STN1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMeshII MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A - SOT - 223封装MOSFET的第二PowerMesh
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 2.5AI（四）|的SOT - 223
P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管（漏电2.5A, 漏源电压-60V，导通电.3Ω
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| BSP16 |
SOT-223 Package High Voltage Transistor
|
ON Semiconductor
|
| CZT7120 |
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 3A I(C) | SOT-223
|
|
| IRFM220A |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1.1A I(D) | SOT-223
|
|
| BSP16T1-D |
SOT-223 Package High Voltage Transistor PNP Silicon
|
ON Semiconductor
|
| BSP19AT1 BSP20AT1 |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| NDT3055J23Z NDT3055NL |
N-Channel Enhancement Mode Field Effect Transistor
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223
|
Fairchild Semiconductor
|
| STN2NF1007 STN2NF10 |
N-channel 100V - 0.23ヘ - 2.4A - SOT-223 STripFET⑩ II Power MOSFET
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET
|
STMicroelectronics
|
| STN3NF06L STN3NF06L08 |
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET
N-channel 60 V, 0.07 ヘ, 4 A, SOT-223 STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
