| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SD1101 |
Low Frequency amplifier. Collector-base voltage VCBO 25 V
|
TY Semiconductor Co., Ltd
|
| 2SD1367 |
Low frequency power amplifier. Collector to base voltage VCBO 20 V
|
TY Semiconductor Co., Ltd
|
| 2SB1001 |
Low frequency power amplifier Collector to base voltage VCBO -20 V
|
TY Semiconductor Co., Ltd
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
| PBSS5120T PBSS5120T215 |
20 V; 1 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd
20 V, 1 A PNP low VCEsat (BISS) transistor
20 V 1 A PNP low VCEsat (BISS) transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BC859W BC859BW |
Low current (max. 100 mA). Low voltage (max. 45 V). Collector-base voltage VCBO -30
PNP General Purpose Transistor
|
TY Semiconductor Co., Ltd
TY Semicondutor
|
| 2SC2412K |
Low Cob.Cob=2.0pF (Typ.) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| PBSS5140S PBSS4140S_1 PBSS4140S |
40 V low VCEsat PNP transistor
From old datasheet system
40 V low VCEsat NPN transistor
|
NXP Semiconductors
Philips Semiconductors
|
