| PART |
Description |
Maker |
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| STB36NF03L |
N-CHANNEL 30V - 0.015 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| HUF76645S3S HUF76645P3 HUF76645S3SNL |
75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| ITF87068SQT |
9A/ 20V/ 0.015 Ohm/ P-Channel/ 2.5V Specified Power MOSFET
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| SQJ461EP-T1-GE3 |
21.7 A, 60 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
|
Vishay Intertechnology, Inc.
|
| NP50P04SLG-E1-AY NP50P04SLG-E2-AY NP50P04SLG-15 |
MOS FIELD EFFECT TRANSISTOR
50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE, MP-3ZK, 3 PIN
|
Renesas Electronics Corporation
Diodes, Inc.
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
