| PART |
Description |
Maker |
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| STB36NF03LT4 |
N-CHANNEL 30V - 0.015 OHM - 36A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
|
ST Microelectronics
|
| HUFA76645S3S HUFA76645P3 HUFA76645S3ST |
75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| PWR4412-2S PWR4412-2SBR0300J PWR4412-2SDR0100J PWR |
Bare Metal Element Resistor
RES CURRENT SENSE .01 OHM 5W 5% RESISTOR, CURRENT SENSE, 5 W, 5 %, 20 ppm, 0.01 ohm, THROUGH HOLE MOUNT
RES CURRENT SENSE .01 OHM 1W 1% RESISTOR, CURRENT SENSE, 1 W, 1 %, 20 ppm, 0.01 ohm, THROUGH HOLE MOUNT
RES CURRENT SENSE .01 OHM 3W 5% RESISTOR, CURRENT SENSE, 3 W, 5 %, 20 ppm, 0.01 ohm, THROUGH HOLE MOUNT
RES CURRENT SENSE .01 OHM 1W 5% RESISTOR, CURRENT SENSE, 1 W, 5 %, 20 ppm, 0.01 ohm, THROUGH HOLE MOUNT
RES CURRENT SENSE .01 OHM 3W 1% RESISTOR, CURRENT SENSE, 3 W, 1 %, 20 ppm, 0.01 ohm, THROUGH HOLE MOUNT
RES CURRENT SENSE .01 OHM 5W 1% RESISTOR, CURRENT SENSE, 5 W, 1 %, 20 ppm, 0.01 ohm, THROUGH HOLE MOUNT
Power Resistors 0.015ohm 3watt 1% RESISTOR, CURRENT SENSE, 3 W, 1 %, 20 ppm, 0.015 ohm, THROUGH HOLE MOUNT
Power Resistors 0.005ohm 5watt 1% RESISTOR, CURRENT SENSE, 5 W, 1 %, 20 ppm, 0.005 ohm, THROUGH HOLE MOUNT
Power Resistors 0.015ohm 5watt 1% RESISTOR, CURRENT SENSE, 5 W, 1 %, 20 ppm, 0.015 ohm, THROUGH HOLE MOUNT
RESISTOR, FIXED, POWER RESISTOR, CURRENT SENSE, 5 W, 5 %, 20 ppm, 0.005 ohm, THROUGH HOLE MOUNT
Power Resistors 0.025ohm 1watt 1% RESISTOR, CURRENT SENSE, 1 W, 1 %, 20 ppm, 0.025 ohm, THROUGH HOLE MOUNT
|
Bourns Electronic Solutions
Bourns, Inc.
|
| STL10N3LLH5 |
N-channel 30 V, 0.015 Ohm, 9 A, PowerFLAT(TM) 3.3x3.3 STripFET(TM) V Power MOSFET
|
ST Microelectronics
|
| IXFD76N07-7X |
70 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET 0.348 X 0.283 INCH, DIE
|
IXYS, Corp.
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| MTP23P06V ON2569 |
TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| MTW33N10E ON2695 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
|
