| PART |
Description |
Maker |
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| Q7010LH5 Q7010RH5 Q7012LH5 Q7012RH5 Q7015L6 Q7015R |
Alternistor triac, 25A, 800 Volt
Alternistor triac, 15A, 400 Volt
Alternistor triac, 25A, 500 Volt
Alternistor triac, 25A, 200 Volt
Alternistor triac, 8A, 500 Volt
Alternistor triac, 25A, 400 Volt
Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-35
Alternistor Triacs 交变双向
Alternistor triac, 6A, 500 Volt
Alternistor triac, 15A, 200 Volt
Alternistor triac, 15A, 500 Volt
Alternistor triac, 15A, 600 Volt
Alternistor Triacs
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
Motorola Mobility Holdings, Inc.
|
| AJ60A-048L-120F04 AL80A-048L-063F34 AJ60A-048L-050 |
1-OUTPUT 50 W DC-DC REG PWR SUPPLY MODULE 2.400 X 2.300 INCH, 0.500 INCH HEIGHT, MODULE
1-OUTPUT 240 W DC-DC REG PWR SUPPLY MODULE 2.400 X 4.600 INCH, 0.500 INCH HEIGHT, MODULE
1-OUTPUT 75 W DC-DC REG PWR SUPPLY MODULE 2.400 X 2.300 INCH, 0.500 INCH HEIGHT, MODULE
1-OUTPUT 100 W DC-DC REG PWR SUPPLY MODULE 2.400 X 2.300 INCH, 0.500 INCH HEIGHT, MODULE
1-OUTPUT 150 W DC-DC REG PWR SUPPLY MODULE
|
Cypress Semiconductor, Corp.
Cooper Bussmann, Inc.
TOKO, Inc.
Fox Electronics
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| AQV217AZ AQV210 AQV210A AQV210AX AQV210AZ AQV212 A |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 600V, load current 50 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 60V, load current 400 mA. Tube packing style.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
GU (General Use) Type [1-Channel (Form A) Type]
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tube packing style.
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 4/5/6-pin side.
|
Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
|
| IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
-11A -200V 0.500 Ohm P-Channel Power MOSFET
11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRFD9220 FN2286 |
600 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET
From old datasheet system
0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
|
Intersil Corporation
|
| QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc.
POWEREX[Powerex Power Semiconductors]
|
|
