PART |
Description |
Maker |
V53C1256162VALS7 V53C1256162VALS7E V53C1256162VALS |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
N.A. ETC[ETC]
|
EMD12324PV EMD12324PV-60 EMD12324PV-75 |
512M: 16M x 32 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
K4X51323PC-8G |
16M x32 Mobile-DDR SDRAM
|
Samsung semiconductor
|
V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC Mosel Vitelic, Corp. Mosel Vitelic Corp
|
V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏,第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
V54C3256164VAT V54C3256164VBT V54C3256404VB V54C32 |
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5 |
128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O 4M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb 256M-P DDR SDRAM IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor http://
|
EM6AA160TS EM6AA160TS-4G EM6AA160TS-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|