| PART |
Description |
Maker |
| M6MGD13TW34DWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| FJ3P02100L FK3P02110L |
Power CSP MOSFET
Power CSP MOSFET’s
|
Panasonic Battery
Panasonic Battery Group
|
| M6MGD13TW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| FDZ191P |
P-Channel 1.5V PowerTrench WL-CSP MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd.
Omron Electronics, LLC
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| FDZ663P |
-20V P-Channel 1.5 V Specified PowerTrenchThin WL-CSP MOSFET
|
Fairchild Semiconductor
|
| FDZ372NZ |
N-Channel 1.5 V Specified PowerTrench? Thin WL-CSP MOSFET
|
Fairchild Semiconductor
|
| FDZ193P |
P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
| BU9889GUL-WE2 |
WL-CSP EEPROM
|
ROHM
|
| BRCG064GWZ-3 |
WL-CSP EEPROM
|
ROHM
|
| CSPESD301 |
1 / 2 and 3-Channel ESD Arrays in CSP
|
California Micro Devices
|
