| PART |
Description |
Maker |
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| NE72118-T2 NE72118 NE72118-T1 |
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET
|
NEC[NEC]
|
| UPD30100GC-40-7EA |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C
Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Infineon Technologies AG
|
| BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| KTK161 |
FM RF,AM RF,VHF Band Amp.
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) N通道结FIFLD EFFFCT晶体管（高频，甚高频波段放大器）
|
Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
|
| ARF448A03 ARF448A ARF448B |
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| SKY77912-21 |
Tx-Rx Front-End Module for Quad-Band GSM / GPRS / EDGE w/ 10 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
| SKY77607 |
Multiband Multimode Power Amplifier Module for Quad-Band GSM / EDGE and Dual-Band (Band I and VIII) WCDMA / HSDPA / HSUPA / HSPA Handsets
|
Skyworks Solutions Inc.
|
