| PART |
Description |
Maker |
| 2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon PNP Transistor
Silicon PNP triple diffusion planar type
|
Panasonic Corporation
|
| 2SA0886 2SA886 |
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Panasonic Corporation
Panasonic, Corp.
|
| 2N6437 2N6438 2N6437-D |
POWER TRANSISTORS PNP SILICON 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA
High-Power PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| BSP31-T BSP32 BSP33-T |
1 A, 60 V, PNP, Si, POWER TRANSISTOR
PNP medium power transistors
1 A, 80 V, PNP, Si, POWER TRANSISTOR
|
NXP Semiconductors N.V.
|
| MJL21193 MJL21193-D MJL21194 |
Power 16A 250V NPN
Silicon Power Transistors
From old datasheet system
TRANSISTOR,BJT,PNP,250V V(BR)CEO,160A I(C),TO-264
Power 16A 250V PNP
|
ON Semiconductor
|
| PZT4033-AA3-R PZT4033L-AA3-R |
1 A, 80 V, PNP, Si, POWER TRANSISTOR SOT-223, 4 PIN
1 A, 80 V, PNP, Si, POWER TRANSISTOR LEAD FREE PACKAGE-4
|
Unisonic Technologies Co., Ltd.
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
| 2SA2102 |
Silicon PNP epitaxial planar type 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Panasonic, Corp.
Panasonic Semiconductor
|
| PHPT610035PK |
PNP/PNP matched high power double bipolar transistor
|
NXP
|
|
