| PART |
Description |
Maker |
| SLE4406SPEC SLE4406SPEMFC3 SLE4406SPEM3 |
512 X 1 EEPROM 5V, UUC
512 X 1 EEPROM 5V, DMA
|
INFINEON TECHNOLOGIES AG
|
| M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM
512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM
CAP 3300UF 50V ELECT SMG RAD
512 Kbit Serial I? Bus EEPROM
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I裁 Bus EEPROM
512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| MC68HC711E20VFS2 MC68HC711E9VFS2 MC68HC711E9VFN2 M |
Microcontroller, 2 MHz, RAM=768, ROM=0, EPROM=20K, EEPROM=512
Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
Microcontroller, 3 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512
|
Motorola
|
| AT24HC04B AT24HC04B-PU AT24HC04B-TH-B AT24HC04B-TH |
8-TSSOP, Pb/HALO FREE, 1.8V(SERIAL EE) 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Two-wire Serial EEPROM 4K (512 x 8)
|
Atmel, Corp.
聚兴科技股份有限公司
ATMEL Corporation
|
| LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
Sharp Corporation
Sharp, Corp.
|
| AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system
EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC
4 Mbit (512 K x 8-Bit)
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| IDT72V70200PFGBLANK IDT72V7020008 IDT72V70200PFBLA |
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
Integrated Device Technology
|
| LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO 512 ×一千?二十四分之一十八× 18同步FIFO
|
Sharp, Corp.
|
| SLA24C04-D SLA24C04-S SLA24C04-D-3 SLA24C04-S-3 Q6 |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus
4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 4千位512 × 8位串行CMOS EEPROM的，I2C同步2线总线
4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Siemens Semiconductor Group
SIEMENS AG
SIEMENS A G
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
