PART |
Description |
Maker |
VXZ2 |
Installation and Maintenance Manual Series
|
SMC
|
MRF18085ALSR3 MRF18085AR3 MRF18085A |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
250R1 PSU12V1AIN |
GSM TELEMETRY SYSTEM
|
rfsolutions.ltd
|
ADP3402 ADP3402ARU |
GSM Power Management System
|
Analog Devices
|
Q67006-A6072 PMB2402 Q67000-A6072 PMB2402-S |
GSM RECEIVER CIRCUIT From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
CX74017 |
RF Transceiver for GSM/GPRS Applications From old datasheet system
|
Conexant
|
MF1105-1 |
FOR IF FILTER OF GSM HAND HELD From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司 MOTOROLA[Motorola, Inc]
|
2SK3077 EA08950 |
900 MHz BAND AMPLIFIER APPLICATIONS (GSM) From old datasheet system
|
Toshiba
|